Huawei has become a poster child for illustrating the grow- ing tensions over China’s efforts to control the worldwide 5G technology market. Concerns about China’s activities in the overall microelectronics and related advanced technology areas have also been widely covered in the recent news.
An executive order in May 2019 on communication tech- nology and supply chain security placed restrictions on the import of communications tech from a potential adversary.
In addition, the Commerce Department put Huawei on the “Entities List,” restricting the export of U.S. technology to Hua- wei without a government license.
But are these policies effective in protecting the United States?
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Dr. Fritze is a Vice President at the Potomac Institute for Policy Studies responsible for the Microelectronics Policy portfolio. His current interests and activities include USG trusted access strategies, support of needed legacy technologies, DOD innovation policy and outreach to Industry and strengthening the US Microelectronics Industrial Base. He is also the Director of the VITAL Center (Vital Infrastructure Technology And Logistics) at Potomac.
Dr. Fritze was the Director of the Disruptive Electronics Division at the USC Information Sciences Institute. (2010-2015). He also held a Research Professor appointment in the USC Ming Hsieh Department of Electrical Engineering (Electrophysics). His research interests at ISI included Trusted Electronics, CMOS Reliability & Robustness, Low power 3DIC enabled electronics and Rad-hard electronics. He was a Program Manager at the DARPA Microsystems Technology Office (MTO) from 2006-2010. While at DARPA, Dr. Fritze was responsible for Programs in the areas of 3D Integrated Circuits (3DIC), Steep-Subthreshold-slope Transistors (STEEP), Radiation Hardening by Design (RHBD), Carbon Electronics for RF Applications (CERA), Silicon-based RF (TEAM), Ultra-low power Digital (ESE), Highly regular designs (GRATE) and Leading-edge foundry access (LEAP).
Prior to joining DARPA, Dr. Fritze was a staff member from 1995-2006 at MIT Lincoln Laboratory in Lexington, Massachusetts, where he worked on fully-depleted silicon on insulator (FDSOI) technology development with an emphasis on novel devices. Particular interests included highly scaled, tunneling-based, and ultra-low power devices. Dr. Fritze also worked in the area of silicon-based integrated optics. Another research interest at Lincoln Laboratory was in the area of resolution-enhanced optical lithography and nanofabrication with particular emphasis on low volume technological solutions.
Dr. Fritze received a Ph.D. in Physics from Brown University in 1994, working in the area of compound semiconductor quantum well physics. He received a B.S. in Physics in 1984 from Lehigh University. Dr. Fritze is an elected member of Tau Beta Pi and Sigma Xi. He is a recipient of the Office of the Secretary of Defense Medal for Exceptional Public Service awarded in 2010. He is a Senior Member of the IEEE and is active on the GOMAC Conference Program Committee as well as the NDIA Electronics Division Policy Group. Dr. Fritze has published over 75 papers and articles in professional journals and holds several U.S. Patents.